UO2 - Dislocation etching

UO2 - Dislocation etching

Material Name: UO2
Recipe No.: 10257
Primary Chemical Element in Material: U
Sample Type: Bulk
Uses: Etching
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Dislocation etching
Etchant (Electrolyte) Composition: Solution a: 6 parts H2O2, 3 parts H2O, 1 part H2SO4. Solution b: Conc. H2SO4. Solution c: 9 parts H2SO4, 1 part H2O2. Solution d: Conc. HNO3. Solution e: Conc. H3PO4. Solution f: KCl sat. with Cl2 gas.
Note: Solution a: |111||100|. Solution b: |111|. Solution c: |111|. Solution d: |111|100|. Solution e: |111|100|. Solution f: |111|100|.
Procedure (Condition): Solution a: Methods used by Shabbir and Robins. Etch in solution a 3 min at 20 C. Solution b: Etch in solution b 5 min above 100 C. Solution c: Etch with solution c 5 min above 20 C. Solution d: Etch with solution d 10 s at 120 C. Solution e: Etch with solution e 5 min above 50 C. Solution f: Etch with solution f 4 min at 840 C.
Reference: Vander Voort, Metallography Principles and Practice, McGraw-Hill, Inc., 1984, p. 728.