InP (100) wafers Cut 3°-off toward (110)

InP (100) wafers Cut 3°-off toward (110) - Chemical polishing

Material Name: InP (100) wafers Cut 3°-off toward (110)
Recipe No.: 7051
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Polishing
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (chemical) polishing
Etchant (Electrolyte) Composition: 1.) x...1% Br2, x...MeOH. 2.) x...x % KOH. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Temperature: RT.
Note: InP (100) wafers cut 3°-off toward (110) used as substrates for epitaxy deposition of various compounds of Ga/Al/As/In by MOCVD. Chem/mech polish in the BRM (1) solution, then soak in the (2) KOH solution to remove native oxide. Before MOCVD use the following cleaning sequence: (1) DI H2O rinse; (2) etch clean in H2SO4, RT, 2 min with ultrasonic; (3) rinse in hot MeOH soak; (4) repeat H2SO4, RT, 3 min; (5) hot MeOH rinse and (6) R, blow dry.
InP (100) wafers. Clean and etch polish with the BRM solution (1), and soak in KOH solution (2) to remove native oxide.
Reference: Cheng, CH - J Electron Mater, 13,703(1984).