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InP (100) p-type wafers - Chemical etching

Material Name: InP (100) p-type wafers
Recipe No.: 7072
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (Chemical) etching
Etchant (Electrolyte) Composition: 1 part HNO3, 3 parts HBr.
Procedure (Condition): Time: 10 sec, temperature: RT.
Note: InP (100) p-type wafers used as substrates for epitaxy growth of InGaAsP. Solution developed defects correlated with protrusions observed in the InGaAsP layer.
Reference: Lourenco, J A - J Electrochem Soc, 131,1914(1984).