InP Layer - Dry Etching

InP Layer - Dry Etching - Demo Record

Material Name: InP
Recipe No.: 9890
Primary Chemical Element in Material: InP
Sample Type: Layer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: See the Table 1.
Procedure (Condition): No data
Note: In this paper we present a novel single-step RIE process for InP membrane optical waveguide etching. The optimization of the process is focused on the sidewall verticality and surface roughness of the etched profile. Significant improvement on the etched profile is achieved for the first time in a single-step RIE process. Loss measurement on fabricated membrane waveguides etched with the proposed RIE process results in a record low waveguide propagation loss (2.5 dB/cm).
Reference: Yuqing Jiao, et al., Vertical and Smooth Single-Step Reactive Ion Etching Process for InP Membrane Waveguides, Journal of The Electrochemical Society, 162 (8) E90-E95 (2015).

Other our software: Metal Etchants v.5.0

Figure 1: The fabrication process for InPmembrane waveguides. (a) wafer bonding (b) InP substrate and InGaAs sacrificial layer removal (c) 1st EBL for waveguides (d) Waveguide etching (e) 2nd EBL for gratings (f) Final device after grating etching.

Table 1: Optimized process parameters.