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Wet Etching of Molybdenum Films

Material Name: Mo
Recipe No.: 10302
Primary Chemical Element in Material: Mo
Sample Type: Thin film
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: See the data file.
Procedure (Condition): No data
Note: The purpose of this study is to examine how certain parameters such as deposition rate, pressure, power, affect the resistivity of molybdenum when using the Angstrom Sputterer. For the purposes of this experiment, developing a film (~1000 Å) with low resistivities is desirable (near bulk resistivity). In addition, a guide has been compiled for future clean room use that gives the characteristics of sputtering molybdenum on the DC1 source and the RF source.
Reference: Jim Tai, Sputtering, Electrical Conductivity and Wet Etching of Molybdenum Films, Funded by the Princeton Plasma Physics Laboratory Summer Program 2005, pp. 1-12.