Cr:Al2O3 - Wet Etching

Cr:Al2O3 - Wet Etching

Material Name: Cr:Al2O3
Recipe No.: 10307
Primary Chemical Element in Material: Cr, Al
Sample Type: Single crystal
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Ruby single crystals (Cr:Al2O3) were grown by the Czochralski technique using a MSR 2 crystal puller, as described previously. The atmosphere used was argon. The starting materials were powdered Al2O3 (Koch & Light), Cr2O3 (Koch & Light) and ZrO2 (Koch & Light) for isolation, all of 4N purity. The purity of the argon (Tehnogas) was also 4N. The iridium crucible (4 cm diameter, 4 cm high) was placed into an alumina vessel surrounded by ZrO2 wool isolation. Double walls were used to protect the high radiation. To decrease the radial temperature gradient in the melt, alumina was mounted around all the system. The crystal rotation rates were between 20 and 50 rpm. The best results were obtained with a crystal rotation of 20 rpm. The rate of crystal growth was between 2–12 mm/h, and experimentally the best results was obtained with 2.7 mm/h. The crucible was not rotated during the growth. After the growth run, the crystal boule was cooled at a rate of about 50 K/h down to room temperature.
A solution of H3PO4 at 593 K with an exposure time of 3 h was found to be suitable for chemical polishing. Asolution of 85% H3PO4 at 523 K with an exposure time of 3 hours was found to be a suitable etching solution.
Procedure (Condition): No data
Note: No data
Reference: ALEKSANDAR GOLUBOVIC, et al., J.Serb.Chem.Soc. 70 (1) 87–95 (2005).