Nano-Fabrication of 30 nm Size MTJ - Silicon

Nano-Fabrication of 30 nm Size MTJ - Silicon - Dry Etching

Material Name: Silicon
Recipe No.: 10313
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: See the data file.
Procedure (Condition): No data
Note: No data
Reference: Bernardo José Calmeiro Pires, Sub-100 nm Spintronic devices on large area wafers, MSc Thesis, Technico Lisboa, 2016, pp. 6, 10.

Figure 1: Layout of the nano-fabrication process. (a) BE definition by using optical lithography. (b) Stack full etch and passivation with a thick Al2O3 layer. (c) Oxide lift-off leaving residues. (d) Removal of oxide residues using a soft CMP step. (e) Nano-pillar definition and pads protection using EBL. (f) Second etch in two steps and passivation with a thin Al2O3 layer. (g) Opening of the via to the nano-pillar by oxide lift-off. (h) TE definition by optical lithography and metallization. (i) Profilometer scans of BE following the thick oxide lift-off (c) and after being submitted to a soft CMP step (d) to remove lift-off residues.

Figure 2: Nano-fabrication of 30 nm size MTJ in 150 mm wafer using RIE approach to open via to pillar.