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Deposition/Etch of SOI - Dry Etching

Material Name: SOI
Recipe No.: 10325
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: SF6=50 sccm, C4F8=125/40 sccm, ICP=1600/1400 W, P=40/30 mTorr, etch rate 120 cycles ->7.2 um.
Procedure (Condition): No data
Note: Plasma Therm, Versaline
Reference: Ricardo Garcia, Marylène Palard, DRY ETCHING CAPABILITIES, Texas Nanofabrication Facility (TNF) node of the National Nanotechnology Coordinated Infrastructure, UTexas at Austin, 2016, PowerPoint Presentation, pp. 1-18.