Silicon Wet Etching

Silicon Wet Etching

Material Name: Silicon
Recipe No.: 10338
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
- Solution used : Potassium hydroxyde KOH, H2O
- Concentration : 41 % in mass (10 moles / litre)
- Temperature : 55°C (85°C max)
- Stirring : 300 tr/mn
- Etching rate : 0.25 µm/min (at 55 °C, for Si (100))
Procedure (Condition): No data
Note: No data
Reference: WET ETCHING BENCH (KOH BHF), Website https://www.femto-st.fr, 2020.