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SiO2 Wet Etching

Material Name: SiO2
Recipe No.: 10339
Primary Chemical Element in Material: Si
Sample Type: Layer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
- Solution used : Buffered Hydrofluoric Acid (BHF)
- Concentration : 1 volume HF 50% for 10 volumes NH4F 40% in H2O
- Temperature : ambient
- Strirring : manual
- Etching rate : 50 nm/min
Procedure (Condition): No data
Note: No data
Reference: WET ETCHING BENCH (KOH BHF), Website https://www.femto-st.fr, 2020.