Ti, SiOx, Si3N4, W, SiC Etch Rates

Ti, SiOx, Si3N4, W, SiC Etch Rates - Wet Etching

Material Name: Ti, SiOx, Si3N4, W, SiC
Recipe No.: 10355
Primary Chemical Element in Material: Ti, Si, W
Sample Type: Wafer, layer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: The etch rate investigation results as a function of volumes are illustrated in table 1. All experiments were performed at 60 °C. To demonstrate synthesis and etch rate control and reproducibility, synthesis was carried out in duplicates and etch rate experiments were performed in triplicates. A temperature of 60 °C was chosen due to its beneficial enhancement from a cleanability, and etch rate robustness perspectives. Etch rate is directly proportional to temperature. In addition, 60 °C is a practical temperature that can be implemented for high volume manufacturing.
Procedure (Condition): No data
Note: No data
Reference: Nabil George Mistkawi, Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices, PhD Thesis, Portland State University, 2010, pp. 117-118.

Table 1: Etch rates as a function of formulation constituents concentrations.