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XPS Argon Sputter Etch Rates of SiO2 - Dry Etching

Material Name: SiO2
Recipe No.: 10356
Primary Chemical Element in Material: Si
Sample Type: Layer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: See the data file.
Procedure (Condition): No data
Note: No data
Reference: XPS Argon Sputter Etch Rates of SiO2, Website https://smif.pratt.duke.edu, 2020, p. 1.