InSb Wafer - Wet Etching

InSb Wafer - Wet Etching

Material Name: InSb
Recipe No.: 10361
Primary Chemical Element in Material: InSb
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Samples (dimensions 6 x 12 x 0.5 mm) were made from InSb wafers cut normal to the [111] direction, mechanically polished with 1 µm alumina powder and washed with distilled water. Three of these were then subjected to different chemical treatments. Thus samples prepared in the following ways were investigated:
(a) Mechanically polished,
(b) etched for 2 min in a 3 : 1 :1 mixture (by volume) of H20, 48% HF and 30% H202,
(c) etched for 2 min in a 1:3 mixture (by volume) of CP4A and glacial acetic acid with 0.18 mol/1 InCl3 added,
(d) etched for 10 sec in CP4A.
Procedure (Condition): No data
Note: No data
Reference: R. G. Copperthwaite, O. A. Kunze, J. Lloyd, J. A. Neely, and W. Tuma, Surface Analysis of InSb by X-Ray Photoelectron Spectroscopy (XPS), Zeitschrift für Naturforschung A, Volume 33: Issue 5, 1978, pp. 523-527.