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Si (111) p- and n-Type Wafers, 8 Ohm cm Resistivity - Wet Etching

Material Name: Si (111) p- and n-type wafers, 8 Ohm cm resistivity
Recipe No.: 1922
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1.) 1 part HF, 1 part HNO3, 1.4 parts HAc, 0.15% I2, 0.24% triton (surfactant). 2.) 1 part iodine etch, 4 parts HAc.
Procedure (Condition): Time: 1-2 min, temperature: RT.
Note: Si (111) p- and n-type wafers, 8 Ohm cm resistivity. wafers used in a study of 18F radioactive tracer adsorption. After etching, water rinse or acetone rinse. Also used on germanium in a similar study.
Reference: Kem, W - RCA Rev, 69,207(1970).