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Si (111) Wafers - Wet Etching

Material Name: Si (111) wafers
Recipe No.: 1923
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1.) 1 part HF, 6 parts HNO3, 3 parts HAc, x...*NaI. 2.) x...0.010 N NaI. *: 0.19 mg/100 ml of solution. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Time: 1.) 1.7 min, 2.) 30 min, temperature: RT.
Note: Si (111) wafers used in a radiochemical surface contamination study. Both of these solutions and the iodine etch, used with 131I radioactive tracer in a study of adsorption of surfaces. Silica, SiO2, and germanium, Ge, also were studied.
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p. 1067.