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Si (110) Wafers with a Thermally Grown SiO2 Thin Film - Wet Etching

Material Name: Si (110) wafers with a thermally grown SiO2 thin film
Recipe No.: 1924
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 100 g KOH, 100 ml H2O.
Procedure (Condition): Time: 6 min, temperature: Boiling.
Note: Si (110) wafers with a thermally grown SiO2 thin film used as an etch mask. wafers were photo lithographically processed with slots opened in the silica mask in bulk <100> directions. Parallel grooves etched to 50 µm depth with 2 µm horizontal etching. Slots were filled with Corning 7070 glass by hot pressing at 750°C before cross sectioning for structure study.
Reference: Stoller, A I - RCA Rev, 69,271(1970).