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Si (100) and (111) Wafers - Acid, Float-off

Material Name: Si (100) and (111) wafers
Recipe No.: 1930
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Acid, float-off
Etchant (Electrolyte) Composition: 1 part HF, 5 parts HNO3.
Procedure (Condition): Temperature: RT.
Note: Si (100) and (111) wafers used as substrates for CVD growth of single crystal thin films of boron phosphide in a study of thin film morphology, physical properties and semiconducting characteristics. Solution used to etch remove the silicon as a float-off tech-nique for TEM (microscope) and Laue (photograph) study of BP.
Reference: Kumashiro, Y et al. - J Cryst Growth, 70,507(1984).