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Si (100), n-Type, 4-7 Ohm cm Resistivity Wafers - Chemical Cleaning

Material Name: Si (100), n-type, 4-7 Ohm cm resistivity wafers
Recipe No.: 1933
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Chemical cleaning
Etchant (Electrolyte) Composition: 1.) x...H2SO4, x...H2O. 2.) x...HNO3. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): No data
Note: Si (100), n-type, 4-7 Ohm cm resistivity wafers used as substrates gor CVD growth of a-Si3N4:H thin films doped with either boron or phosphorus. silicon wafers were cleaned as follows; (1) acetone; (2) DI water rinse; (3) clean in solution (1), DI water rinse; (4) clean in solution (2), heavy DI water rinse and N2 blow dry. Final clean in CVD reactor at 350°C.
Reference: Fang, Y K et al. - J Electrochem Soc, 132,1222(1985).