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Si (100) Wafers Unpassivated Surfaces or with SiO2 or TaSi2 Thin Films - Chemical Cleaning

Material Name: Si (100) wafers unpassivated surfaces or with SiO2 or TaSi2 Thin Films
Recipe No.: 1934
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Chemical cleaning
Etchant (Electrolyte) Composition: 1 part HF, 30 parts NH4F (40%).
Procedure (Condition): Time: 2 min, temperature: RT.
Note: Si (100) wafers unpassivated surfaces or with SiO2 or TaSi2 thin films used as substrates for tungsten selective deposition onto silicon photo resist opened circular patterns. All three substrate types were cleaned as follows: (1) clean in BHF; (2) a 10 min rinse in 18 M Ohm DI water; (3) spin dry. This leaves about a 20 A native oxide on the surfaces. Tungsten was deposited from WF6 between 260 and 400°C and included thermal annealing to form WSi2 (tetragonal crystal system).
Reference: Green, M L & Levy, R A - J Electrochem Soc, 132,1243(1985).