Si (110), (112), and (113) Wafers for p-p+ Epitaxy

Si (110), (112), and (113) Wafers for p-p+ Epitaxy - Chemical Cleaning

Material Name: Si (110), (112), and (113) wafers for p-p+ epitaxy
Recipe No.: 1935
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Chemical cleaning
Etchant (Electrolyte) Composition: x...HCl, vapor, x...H2. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Temperature: 1100 C.
Note: Si (110), (112), and (113) wafers for p-p+ epitaxy. substrate wafers were 0.007 Ohm cm resistivity with epitaxy films 4-6 Ohm cm. substrates were cleaned with HCl vapors in the epitaxy reactor prior to silicon deposition. Tamura, M & Sugita, Y - J Appl Phys, 44,3442(1973).
Si (111), n-type wafers with resistivity range from 10-150 Ohm cm and diameters from 72 to 2" used in the fabrication of SCRs with p-type gallium diffusion and an n+ silicon epitaxy. Hot HCl vapors used 30 sec at 1000°C as a final cleaning etch in the epitaxy reactor prior to silicon deposition.
Reference: See the above text.