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Si (111), p-Type Wafers Used as Substrates for Tungsten Deposition - Chemical Cleaning

Material Name: Si (111), p-type wafers used as substrates for tungsten deposition
Recipe No.: 1936
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Chemical cleaning
Etchant (Electrolyte) Composition: 1.) 3 parts H2SO4, 1 part H2O2. 2.) 1 part HF, 10 parts H2O.
Procedure (Condition): Time: 1.) 10 min, 2.) 6 sec, temperature: 1.) 95 C, 2.) RT.
Note: Si (111), p-type wafers used as substrates for tungsten deposition. silicon wafers were coated with 1000 A SiO2, then 4500 A poly-Si. After acid cleaning wafers were given an Ar+ ion cleaning prior to tungsten deposition from WF6 and annealing to WSi2.
Reference: Tsao, K Y & Busta, H H - J Electrochem Soc, 131,2702(1984).