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Si (111) and (110) Wafers - Wet Etching

Material Name: Si (111) and (110) wafers
Recipe No.: 1937
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1.) *RCA procedure. 2.) x...HF, conc. *: See RCA etch. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): No data
Note: Si (111) and (110) wafers used as substrates for reactive pulse plasma deposition of thin film diamond (from carbon) and Boron nitride as dielectric coatings.
Reference: Szmidt, J et al. - Thin Solid Films, 110,7(1983).