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Poly-Si Grown on (100) Silicon Substrates - Wet Etching

Material Name: Poly-Si grown on (100) silicon substrates
Recipe No.: 1939
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1 part HF, 750 parts HNO3, 250 parts HAc.
Procedure (Condition): Rate: 300 A/min.
Note: Poly-Si grown on (100) silicon substrates. Solution used to step-etch the poly-silicon layer. Poly-Si was as (100) crystallites with low angle grain boundaries.
Reference: Banerjee, S K et al. - J Electrochem Soc, 131,14O9(1984).