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Si as a Pre-Cut Single Cystal Octahedron, (111) Form - Wet Etching
Material Name: Si as a pre-cut single cystal octahedron, (111) form
Recipe No.: 1951
Primary Chemical Element in Material: Si
Sample Type: Single crystal
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 250 ml 30% KOH, 100 ml ethylene glycol.
Procedure (Condition): Temperature: Boiling.
Note: Si as a pre-cut single crystal octahedron, (111) form. The octahedron etched in this solution developed (211) facets on the (111) faces producing a finite crystal form of a trisoctahedron (hhl).
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p. 1074.