Si (100) Wafers with Thermal SiO2 Thin Films

Si (100) Wafers with Thermal SiO2 Thin Films - Dry Etching

Material Name: Si (100) wafers with thermal SiO2 Thin Films
Recipe No.: 1954
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: 1.) x...SF6. 2.) x...SF6, x...Argon. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Gas flow: 50 sccm anode coupled, pressure: 0.23 mbar, power: 1000 V ptp.
Note: Si (100) wafers with thermal SiO2 thin films photolithographically patterned and used in a study of SF6 RF plasma etching. Best selectivity ratio of Si:SiO2 was 30:1. Best results were obtained with parallel plate reactor rather than barrel type. Various mixtures of SF6:Ar and mixtures wilh up to 50% H2 evaluated for etch rates and ratio selectivity vs. CF4:4% O2. The undiluted SF6, etch rate was 10 to 15 times greater than the CF4:4% O2 plasma. Etch rate of silicon with SF6 (0 to 25% O2), cathode coupled, was in the range of 0.5 µm/ min; anode coupled about 0.15 µm/min with anode coupled CF4 (0-25% O2) slightly under 0.1 µm/min. SF6:Ar silicon etch rate 0.3 µm/min to 0.5 µm/min, 20-100% SF6.
Reference: Eiscle, K M - J Electrochem Sac, 128,123(1981).