Si (100) Wafers Used as Substrates with p-Doped and Undoped Poly - Si and SiO2 Thin Films

Si (100) Wafers Used as Substrates with p-Doped and Undoped Poly - Si and SiO2 Thin Films - Dry Etching

Material Name: Si (100) wafers used as substrates with p-doped and undoped poly-Si and SiO2 Thin Films
Recipe No.: 1955
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: x...C2F6, x...O2 (8%). Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Temperature: 25-30 C water cooling, gas flow: 200 sccm, pressure: 0.35-0.40 Torr, power: 100-550 W.
Note: Si (100) wafers used as substrates with p-doped and undoped poly-Si and SiO2 thin films, and photo resist were evaluated for etch rates and channel type etch profiles. The gas mixture shown above was anisotropic and gave best results of five mixtures evaluated. RF power was 350 W and pressure 0.35 Torr. Etch rates: (1) P:poly-Si - 800 A/min; (2) Undoped poly-Si - 350 A/min; (3) SiO2 - 60 A/min and (4) photo resist- 100 A/min. Selectivity of P:poly-Si to SiO2 was 13:1.
Reference: Adama, A C & Capio, C D - J Electrochem Soc, 128,366(1981).