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Si (100) Wafers - Dry Etching

Material Name: Si (100) wafers
Recipe No.: 1957
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: 1 part C2F6, 1 part CF3Cl.
Procedure (Condition): Temperature: 25-30 C, gas flow: 200 sccm, pressure: 0.40 Torr, power: 550 W.
Note: Si (100) wafers. Etch rates: (1) P:poly-Si - 1590 A/min; (2) undoped poly-Si - 980 A/min; (3) SiO, - 200 A/min and (4) photo resist - 570 A/min. Selectivity of P:poly-Si to SiO; was 5:1.
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p. 1075.