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CdTe (111) Wafers - Wet Etching

Material Name: CdTe (111) wafers
Recipe No.: 197
Primary Chemical Element in Material: Cd
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1 part HF, 2 parts H2O2, 2 parts H2O.
Procedure (Condition): No data
Note: CdTe (111) wafers cut from an ingot grown by the Vertical Bridgman technique. specimens were cleaned in the following sequence: 13% Br3:MeOH, RT, 3 min to etch remove work damage, and DI water rinse. EAg-1 etch used to develop etch pits on (111)Cd surfaces. Substructure was developed by the solution shown. This structure was cellular due to subgrains from supercooling (?), or from high temperature stress (?) during growth. Slow ingot growth will reduce such structure.
Reference: Oda, O et.al, - J Cryst Growth, 71,273(1985).