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Al2O3 Thin Film Deposition on InGaAsP/InP - Oxide, Passivation

Material Name: Al2O3 thin film deposition on InGaAsP/InP
Recipe No.: 22
Primary Chemical Element in Material: Al
Sample Type: Thin film
Uses: Passivation
Etchant Name: None
Etching Method: None
Etchant (Electrolyte) Composition: x...Al2O3. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): No data
Note: Al2O3 thin film deposition on InGaAsP/InP (100) LED devices as an anti-reflective (AR) coating as an improvement over Si3N4. Thickness was 1805 A onto TO-18 type package headers with LEDs previously bonded.
Reference: Chin, A K et al. - J Vac Sci Technol. B(1),72(1983).