Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

InP - Surface Cleaning

Material Name: InP
Recipe No.: 3956
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Surface cleaning
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (5:1:1)
Procedure (Condition): No data
Note: Surface cleaning. InP substrate cleaning prior to OMVPE growth; 3 min at 60 C; Ref. (Kamada, M., 1989).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 60.