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InP - Surface Cleaning

Material Name: InP
Recipe No.: 3957
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Surface cleaning
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (5:5:1)
Procedure (Condition): No data
Note: Surface cleaning. Application: surface cleaning for ion implantation; InP and InGaAs 2 min followed by 5 min 1% Br2/methanol; Ref. (Kamiya, Y., 1986).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 60.