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InP - Surface Cleaning

Material Name: InP
Recipe No.: 3958
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Surface cleaning
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (5:1:1)
Procedure (Condition): InP substrate cleaning, first step, followed by Br2/methanol second step, followed by KOH third step, followed by DI water rinse.
Note: Surface cleaning. Ref. (Narayan, S.Y., 1981).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 60.