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InP - Surface Cleaning

Material Name: InP
Recipe No.: 3960
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Surface cleaning
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (100:0.92:5)
Procedure (Condition): InP surface cleaning prior to Br2/methanol removal of surface polish damage; (100) etch rate = 0.02 µm/min; (111)B etch rate = 0.06 µm/min; gives etch rate dependence on H2O2 concentration.
Note: Surface cleaning. Ref. (Nishitani, Y., 1979).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 61.