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GaSb (111) and (100) Wafers - Wet Etching

Material Name: GaSb (111) and (100) wafers
Recipe No.: 398
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1.) 2 parts HCl. 2.) 1 part HCl, 1 part HNO3.
Procedure (Condition): Temperature: RT.
Note: GaSb (111) and (100) wafers. Etch reaction is shown to be moderate to vigorous with both formulations. Used in a development study of etchants for GaSb.
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p. 407.