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InGaAs from InAlAs - Dry Etching

Material Name: InGaAs from InAlAs
Recipe No.: 4555
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: Photochemical dry etch; CH3Br
Procedure (Condition): No data
Note: Dry etch - material selective. Photochemical dry etch; CH3Br with a low pressure mercury lamp; InGaAs selective etch from InAlAs; selectivity of 25; Ref. (Kuroda, S., 1992).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 127.