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InGaAs from InAlAs - Dry Etching

Material Name: InGaAs from InAlAs
Recipe No.: 4556
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: Photochemical etch in HBr gas
Procedure (Condition): No data
Note: Dry etch - material selective. Photochemical etch in HBr gas; selective etch of InGaAs from InAlAs; selectivity of .100 results from non-volatile oxide formation on InAlAs; Ref. (Habibi, S., 1995a).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 127.