Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

Citric Acid:H2O2 - InGaAs/InAlAs/InP - Wet Etchant by Chemical Composition

Material Name: InGaAs/InAlAs/InP
Recipe No.: 4937
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: C6H8O7(citric acid):H2O2:H2O
Procedure (Condition): No data
Note: Wet etchant by chemical composition. % s wet etch following reactive ion etch of InP/InGaAlAs/InGaAs heterostructure detectors; removes about 150 A InGaAs, 70 A nAlGaAs and <20 A InP; Ref. (Kollakowski, St., 1998).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 155.