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Citric Acid:H2O2 - InGaAs/InAlAs/InP - Wet Etchant by Chemical Composition

Material Name: InGaAs/InAlAs/InP
Recipe No.: 4938
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O:H2O2 (1:1:8)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. AlAs selective etch from InP as a sacrifice layer to lift-off InP epilayer from the substrate; Ref. (Bailey, S.G., 1993).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 155.