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Citric Acid:H2O2 - InGaAs/InAlAs/InP - Wet Etchant by Chemical Composition

Material Name: InGaAs/InAlAs/InP
Recipe No.: 4939
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: C6H8O7(citric acid):H2O2:H2O
Procedure (Condition): No data
Note: Wet etchant by chemical composition. 5 s wet etch following reactive ion etch of InP/InGaAlAs/InGaAs heterostructure detectors; removes about 150 A InGaAs, 70 A InAlGaAs and <20 A InP; Ref. (Lemm, Ch., 1997).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 155.