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Citric Acid:H2O2 - InP - Wet Etchant by Chemical Composition

Material Name: InP
Recipe No.: 4940
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2 (1:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. InP surface cleaning for MBE regrowth gives high surface defect density; Ref. (Passenberg, W., 1997).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 156.