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Citric Acid:H2O2 - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 4943
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2:H2O (50:x:50); 1 < x < 10
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs etch rate study shows proportional dependence on H2O2 concentration; low etch rates are surface reaction limited and show flat bottomed profiles; high etch rates are H2O2-diffusion limited and show enhanced etching at mask edges; Ref. (Kohn, E., 1980).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 156.