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Citric Acid:H2O2 - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 4946
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:NH4OH:H2O2 (citric acid pH adjusted to 6.5 with NH4OH; citric acid:H2O2 ratio = 100).
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Selective etch of GaAs from Al0.15Ga0.85As and; shows etch rate dependence on concentration and pH; Ref. (Kitano, T., 1997).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 156.