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Citric Acid:H2O2 - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 4949
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2 (5:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Application: selective removal of GaAs from AlGaAs etch stop layer for micromachining; undercutting etch rate is 0.09 µm/min; excellent uniformity and reproducibility; Ref. (Ribas, R.P., 1998).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 156.