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Citric Acid:H2O2 - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 4951
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
Citric acid:H2O2 (25:1); InGaAs etch rate = 1200 A/min
Citric acid:H2O2 (25:1); p-InGaAs etch rate = 450 A/min
Citric acid:H2O2:H2O (1:1:10); InGaAs etch rate = 700 A/min
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Ref. (Elder, D.I., 1983).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 156.