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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4953
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2 (10:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs selective etch from Al0.3Ga0.7As, selectivity = 90; GaAs etch rate = 0.21 µm/min at 18 C; Al0.3Ga0.7As etch rate = 0.022 µm/min at 18 C; Ref. (Juang, C., 1990).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 157.