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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4956
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O (1 g of anhydrous citric acid:1 ml water)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Application: InGaAs selective removal from GaAs; GaAs 40 A/min; In0.2Ga0.8As 751 A/min; Ref. (Reed, J.D., 1995). Citric acid:H2O2 (4:1); selective etch of GaAs from Al0.28Ga0.72As; Ref. (Mao, B.-Y., 1994).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 157.