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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4960
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2 (m:1, with 1 < m < 9)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs substrate removal using AlAs or AlGaAs etch stop layers; problems with etch stop layer oxidation; Ref. (Carter-Coman, C., 1997).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 158.