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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4961
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid (1 wt.% anhydrous to 1 wt.% water):H2O2:H2O (5:1:75)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs/non-selective etch; GaAs rate = 15.3 nm/min; AlGaAs rate = 17.6 nm/min; Ref. (Cho, S.-J., 1999).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 158.