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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4963
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Citric acid:H2O2:NH4OH
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Study of concentration and pH for selective etch of GaAs from Al0.22Ga0.78As; selectivity of 200 at 20 C and 500 at 0 C; GaAs rate = 1000 A/min; Ref. (Hue, X., 1998). Citric acid:H2O2 (4:1); etches GaAs selectivity from AlxGa(1-x)As; selectivity ~110; Ref. (Lee, H.J., 1995b).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 158.