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Citric Acid:H2O2 - InGaAs/AlGaAs/GaAs - Wet Etchant by Chemical Composition

Material Name: InGaAs/AlGaAs/GaAs
Recipe No.: 4968
Primary Chemical Element in Material: In, Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Buffer:H2O2 (5:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs selective etch from AlGaAs or AlAs. Used for reproducible fabrication of integrated circuit GaAs FETs with etch stop layer of 25 A Al0.35Ga0.65As or 8 A AlAs. The buffered solution is insensitive to dilution or contamination. GaAs etch rate = 45 A/s; Ref. (Brunemeier, B.E., 1993).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 158.